It then proved that potassium bromide and potassium iodide showed the spectra that are characteristic of a face-centred cubic lattice, while the spectra of potassium chloride represented a simple cubic lattice, sodium chloride occupying an intermediate position. As it must be assumed, on the strength of the analogy of these salts, both in a chemical and a crystallographical sense, that they are possessed of a corresponding space lattice, which could also be corroborated in another way, it was proved by those researchers that the lattice of the crystals in question consists of two face-centred cubic lattices corresponding to the two atoms, which interpenetrate in such a way that they together constitute one single cubic lattice.
From these investigations it follows that a metal atom in the crystals of the alkaloid salts is situated at one and the same distance from the six haloid atoms nearest to it, and vice versa — a relationship that was found to prevail, mutatis mutandis, in all the crystals examined. That means the exceedingly important discovery, both for molecular physics and chemistry, that the crystals consist of atomic lattices and not, as has been always imagined, of molecular ones. Two face-centred cubic lattices can also interpenetrate in such a way that every point belonging to the one lattice is at the centre of gravity of a tetrahedron whose vertices are points belonging to the other lattice.
That structure was found by the two Braggs in the diamond, and afforded an experimental support for the tetrahedral arrangement that chemists postulate for the four-coordinate carbon. On the other hand, the explanation became evident of why crystallographers have not been able to agree regarding the class in the regular system to which the diamond should be referred. It would carry us too far and be quite too complicated a proceeding to give an account here of the further investigations into the space lattices of the crystals.
THE ABNORMAL REFLECTION OF X-RAYS BY CRYSTALS.
It will suffice to add that, in the course of their investigations, the two Braggs have also discovered important relations between the amplitude and the phase difference of the diffracted rays on the one hand and the atomic weights on the other, and have also shown experimentally the influence of heat on the space lattice. Finally it may be mentioned that the two investigators have also determined the wavelengths of the X-rays and the distances between the successive planes placed to pass through the lattice points with such exactitude, that the error, if any, is probably a t most some few units per cent and is more due to the general physical constant entering into the calculations than to the measurements themselves.
Thanks to the methods that the Braggs, father and son, have devised for investigating crystal structures, an entirely new world has been opened and has already in part been explored with marvellous exactitude. The significance of these methods, and of the results attained by their means, cannot as yet be gauged in its entirety, however imposing its dimensions already appear to be.
In consideration of the great importance that these methods possess for research in the realm of physics, the Swedish Royal Academy of Sciences decided that the Nobel Prize in Physics should be divided between Professor W.
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The pitch P op between linear aperture 31, typically 3mm or more, preferably 3. Pitch P op between linear aperture 31, When the angle theta op is within a preferable range of the above, in step described later of growing a GaN crystal in ammonothermal method, it is coreless and lateral growth GaN crystal grown through linear opening above the pattern mask it becomes easy. Pattern mask 30 shown in FIG.
Pitch P op -2 between the pitch P op -1 and the second linear opening between the first straight aperture are each constant. Pitch P op -1 between the first straight aperture , usually 3mm or more, preferably 3. Second linear opening between the pitch P op -2 of typically 3mm or more, preferably 6mm or more, more preferably 9mm or more, and usually 20mm or less.
When the angle theta op -1 and theta op -2 is within a preferable range of the above, in step described later of growing a GaN crystal in ammonothermal method, GaN is grown through the straight opening and a second linear opening crystal, it is easy to coreless by lateral growth over the pattern mask. The straight opening between the pitch P op -1, pitch P op -2 between the second linear opening , and the pitch P op -3 between the third rectilinear openings , are each fixed.
The straight opening between the pitch P op -1, pitch P op -3 between the pitch P op -2 and third linear opening between the second linear opening are all typically 4mm or more, preferably 5mm or more, more preferably 6mm or more, and usually 20mm or less. A step in this step of growing a GaN crystal in mono thermal method, before on a nitrogen-polar surface of the formed seed a pattern mask in step, a GaN crystal is grown in ammonothermal method. Figure 11 is a sectional view showing a state in which GaN crystal is grown. Figure 11 b shows the place where GaN crystal 40 begins to grow inside the linear opening 31 of the pattern mask Eventually, as shown in FIG.
Which linear openings grows through the GaN crystals, until begin coreless contact with GaN crystal to grow through the linear opening of the adjacent, growing  direction normal 1mm or more. Therefore, between the pattern mask 30 and the GaN crystal 40, the void 50 is formed. Because fewer contact between the GaN crystal and the pattern mask at such growth manner, the effect of the pattern mask has on the crystallinity of the GaN crystal is reduced.
After coreless, as shown in FIG. Growth of GaN crystal by the ammonothermal method can be performed by using the crystal growth apparatus shown in FIG. Crystal growth apparatus includes a autoclave of the tubular, the growth vessel of the tubular to be installed therein. Growth vessel has a raw material dissolution zone a and the crystal growth zone b partitioned with each other in the baffle therein. The raw material dissolution zone a feedstock F is placed.
The crystal growth zone b, the seed was suspended in the platinum wire C-plane GaN wafer S is placed. A vacuum pump , the gas line ammonia cylinder and the nitrogen gas cylinder is connected, it is connected to the autoclave and growth vessel through the valve When loading ammonia in growth vessel , it is possible to determine the amount of ammonia supplied from the ammonia cylinder by the mass flow meter Feedstock powder, a single crystal or polycrystalline GaN of grains or clusters.
The amount of impurities of water, oxygen, etc. To facilitate the dissolution of feedstock, mineralizing agent is used. Ammonium fluoride, hydrogen fluoride and ammonia growth vessel the HF may be obtained by reacting. Similarly, ammonium iodide, ammonia and hydrogen iodide in the growth vessel and HI may be obtained by reacting. This problem can be solved by a combination of ammonium iodide.
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There are similar utilities also ammonium chloride and ammonium bromide. If the growth vessel is within the above specified temperature range, the use of ammonium chloride, the only ammonium halide selected from bromide and ammonium iodide as a mineralizer is not recommended. When these mineralizer was used without combination with ammonium fluoride, GaN crystals in the temperature range to grow substantially only  direction, hardly grow in the lateral direction.
In the case of using a mineralizer ammonium fluoride alone, since lateral growth is promoted strongly, hardly void is formed between the GaN crystal and the pattern mask. When growing the GaN crystal on the seed S is, in order to space between the autoclave and growth chamber filled with ammonia, and heated from the outside of the autoclave by a heater not shown , growth vessel the to a supercritical state or subcritical state.
Above the pattern mask, in order to successfully coreless a GaN crystal, for example, the amount of ammonium fluoride and ammonium iodide, and 0. After coreless in the same conditions, or,  direction of the growth rate of GaN is in a condition of changing to be higher than before the coreless, thereby further grow the GaN crystal. In the step of growing GaN crystal by the ammonothermal method, it is possible to replace the growth vessel each time the feedstock is exhausted, repeated regrowth.
By the above procedure, the thickness direction is parallel or substantially parallel to the c axis, it is possible to obtain a plate-like GaN single crystal.
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By slicing the GaN single crystal in different directions, it is possible to obtain a GaN wafer. For example, if the parallel slice C-plane, it is possible to obtain a C-plane GaN wafer. Resulting GaN wafer, other that can be used preferably in the manufacture of semiconductor devices or the like, can be used in seeds for growing a bulk GaN crystal.
In the pattern mask 30 of a stripe type shown in other 8, the angle theta op formed between the direction of one is extended line of intersection between the N-polar plane and M-plane stretching direction and the reference direction of the linear opening 31, It affects the ratio of  direction and a lateral growth rate of the GaN crystal to grow through the linear opening. Therefore, in order to grow a GaN crystal  direction 1mm or more from coreless start, it is desirable not too large angle theta op. The same as that described above for the angle theta op is, can also be referred to as the angle theta op -1 and theta op -2 in the pattern mask 30 of orthorhombic lattice type shown in FIG.
It causes hardly occurs coreless GaN crystal each other to grow through the respective straight openings adjacent two aligned parallel to place a long pitch of the linear opening 3mm above pattern mask. To overcome this tendency, to increase the probability of coreless occurs, it is effective to reduce the growth rate of the GaN crystal. One means for reducing the growth rate of the GaN crystal is to reduce the raw material dissolution zone in the growth vessel the temperature difference between the crystal growth zone.
Other, it is also effective to easily occur a coreless GaN crystal pattern of the pattern mask and orthorhombic lattice or a hexagonal lattice type. Experimental results 5. The amount of ammonium fluoride and ammonium iodide in a molar ratio to ammonia put in the growth vessel, was 0. Ammonium iodide was generated by introducing the hydrogen iodide HI into the growth vessel was placed in the ammonia.
To open the growth vessel where the 35 days from the start of the growth has elapsed, it was observed taking out the grown GaN crystal. Growth front GaN crystal had reached above the pattern mask through the linear opening, the lateral growth rate is not uniform in a plane, but in some already coreless begins, most part coreless It was before. After the observation, it transferred to a growth container you have prepared a new GaN crystal, was re-grow at the same ammonothermally growth conditions again. To open the growth vessel where the 35 days from the start of the re-growth has elapsed, it was taken out of the GaN crystal.
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GaN crystal is between the re-growth completely coreless, growth front had been flattened. If total, GaN crystals were approximately 4. V groove is observed in the  side of the ammonothermal grown GaN crystal. And more particularly, to separate the grown GaN crystal from the seed, when observing the surface of the  side the side that has been bound to the seed , the plurality of parallel V grooves with each other, are formed at equal intervals It was.
Direction of the V-groove is parallel to the linear opening pattern mask provided on the seed surface before crystal growth, also the pitch between the V grooves were the same as the pitch between the straight line-shaped opening. The depth of the V groove measured with a laser microscope was 1. Of which was fabricated by processing a sheet, a photograph of the double-side polishing C-plane GaN wafer having a thickness of N-polar surface to an alkali etching a fine cone are densely formed matt surface. Mean values of EPD between sub region was 1. Mean values of EPD between sub region was 2.
Mean values of EPD between sub region was 8. Mean values of EPD between sub region was 7. The A pattern of white portion and a gray portion is complexly mixed is observed, due to the fact that the etching process described above, the nitrogen-polar surface is a rough surface. As shown in FIG. The C-plane GaN wafer produced in Experiment 1, such a linear etch pit array was formed in 4mm period throughout gallium polarity surface.
Extending direction of the linear etch pit array was consistent with the extending direction of the linear opening in the pattern mask provided on the HVPE seed. On the other hand, the position of the linear etch pit array and the straight line-shaped opening is deviated 2mm in a direction perpendicular to the stretched direction. This is, GaN crystal grown on the N-polar surface of the HVPE seed when coreless over the pattern mask, suggesting that linear opening parallel linear dislocation array is formed.
Above 5. By processing the other one of the plurality of wafer blank obtained in 4 , to produce a C-plane GaN wafer having a thickness of The distance between the two pit-free area was about 0. X-ray source used was MoKarufa, since the thickness of the sample was Thus, X-rays topography image in FIG. In any part of the C-plane GaN wafer produced in this Experiment 1, it was possible to obtain a transmission X-ray topography image.
The incident optical system of the X-ray diffraction device was used Ge 2 crystal monochromator. Beam size of the X-rays in the sample surface, the incident angle of the X-ray was set to be 0. During the measurement, the beam size and the direction and the X-ray incident surface to be 3mm were perpendicular to each other. The incident plane is perpendicular to the reflecting surface is that of a plane including the incident and reflected rays.
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Results measured over The incident side optical system, using an X-ray mirror and Ge 4-crystal monochromator. During the measurement, the beam size and the direction and the X-ray incident surface to be 5mm were perpendicular to each other. Some of the plurality of absorption peaks, the peak top wavelength contained four peaks in each cm around -1, cm around -1, around Cm -1 and around cm The X-ray diffraction characteristics of GaN crystal after regrowth obtained in 3 , while a state bound the GaN crystal seed, X-ray diffraction apparatus [Spectris Co.
The incident optical system of the X-ray diffraction apparatus using a Ge 2 crystal monochromator. On virtual line segment drawn Azuguron surface of the GaN crystal grown on the nitrogen-polar surface of the HVPE seed nitrogen polar plane were measured at 0. Line segment is perpendicular to the stripe direction of the pattern mask formed on the nitrogen-polar surface of the HVPE seed length was Experiment 2 1 was prepared HVPE seed of things the same quality used in the preparation Experiment 1 seed.
However, the pattern of the pattern mask, was orthorhombic lattice type having a first straight aperture and a second linear opening extending in different directions. The width of the straight opening and a second linear opening are both set to 50 [mu] m. Pitch between the straight opening and 4 mm, the pitch between the second linear opening was 12 mm. Using the crystal growth apparatus and the crystal growth conditions are the same as in Experiment 1. However, the growth time was 35 days, the re-growth was not carried out.
GaN crystal was 2. Growth front is flattened, coreless had been substantially completed. Then, it is chosen so how two points, the absolute value of the curvature radius of the C-plane in a direction parallel to the line segment X has never below 78m. Then, it is chosen so how two points, the absolute value of the curvature radius of the C-plane in a direction parallel to the line segment Y is never less than 52m. The X-ray diffraction characteristics of the GaN crystal obtained in 3 , while a state bound the GaN crystal seeds, using X-ray diffraction apparatus [Spectris Co.
Line segment is a pattern mask formed on the nitrogen-polar surface of the HVPE seed, at an angle of 78 degrees formed between the extending direction of the straight opening and is parallel to the one m-axis, the length is 41mm there were. Has been described with reference to specific embodiments of the present invention, each of the embodiments has been presented as an example, not intended to limit the scope of the present invention. Each of the embodiments described herein, without departing from the scope and spirit of the invention, can be variously modified and within the feasible range, combined with the features described by the other embodiments be able to.
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Kind code of ref document : A. Ref country code : DE. This characteristic is exploited to produce cyanotype impressions on fabrics and for blueprinting design drawings. Here, the fabric or paper is treated with a mixture of chemicals that react upon exposure to ultraviolet light to form an insoluble blue compound. Electronic excitations caused by ultraviolet radiation also produce changes in the colour and transparency of photosensitive and photochromic glasses. Photochemical and photostructural changes in certain polymers constitute the basis for photolithography and the processing of the microelectronic circuits.
Although invisible to the eyes of humans and most vertebrates , near-ultraviolet light can be seen by many insects.
Butterflies and many flowers that appear to have identical colour patterns under visible light are distinctly different when viewed under the ultraviolet rays perceptible to insects. An important difference between ultraviolet light and electromagnetic radiation of lower frequencies is the ability of the former to ionize , meaning that it can knock an electron out from atoms and molecules. All high-frequency electromagnetic radiation beyond the visible—i.
The harmful effects of ultraviolet light to humans and larger animals are mitigated by the fact that this form of radiation does not penetrate much further than the skin. The body of a sunbather is struck by 10 21 photons every second, and 1 percent of these, or more than a billion billion per second, are photons of ultraviolet radiation. Tanning and natural body pigments help to protect the skin to some degree, preventing the destruction of skin cells by ultraviolet light.
Without this protective layer of ozone, life on Earth would not be possible. In the late 20th century this life-protecting stratospheric ozone layer was reduced by chlorine atoms in chlorofluorocarbon or Freon gases released into the atmosphere by aerosol propellants, air-conditioner coolants, solvents used in the manufacture of electronic components, and other sources. Limits were placed on the sale of ozone-depleting chemicals, and the ozone layer was expected to recover eventually. Ionized atomic oxygen, nitrogen , and nitric oxide are produced in the upper atmosphere by absorption of solar ultraviolet radiation.
This ionized region is the ionosphere , which affects radio communications and reflects and absorbs radio waves of frequencies below 40 MHz.
A few years later J. Thomson of England showed that cathode rays were electrons emitted from the negative electrode [cathode] of the discharge tube.